Si diffusion in GaAs

Bulletin of materials science

R Pothiraj²  S D D Roy¹  P Murugan³  K Ramachandran³ 

[1] Permanent address: NM Christian College, Martandam 629 165, India$$Permanent address: NM Christian College, Martandam 629 165, IndiaPermanent address: NM Christian College, Martandam 629 165, India$$;Department of Physics, Sri SRNM College, Sattur 626 203, India$$Department of Physics, Sri SRNM College, Sattur 626 203, IndiaDepartment of Physics, Sri SRNM College, Sattur 626 203, India$$;School of Physics, Madurai Kamaraj University, Madurai 625 021, India$$School of Physics, Madurai Kamaraj University, Madurai 625 021, IndiaSchool of Physics, Madurai Kamaraj University, Madurai 625 021, India$$

关键词: Solid state diffusion;    lattice dynamics;    impurity diffusion.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Theoretical studies are carried out to ascertain the dominant mechanism of Si diffusion in GaAs. Lattice dynamical model calculations have shown that the most probable diffusion mechanism is through a single vacancy even though several experiments cannot fix the mechanism as substitutional, substitutional�?�interstitial pair or neutral defect pair.

【 授权许可】

Unknown