Si diffusion in GaAs

Bulletin of Materials Science

关键词: Solid state diffusion;    lattice dynamics;    impurity diffusion.;   

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Theoretical studies are carried out to ascertain the dominant mechanism of Si diffusion in GaAs. Lattice dynamical model calculations have shown that the most probable diffusion mechanism is through a single vacancy even though several experiments cannot fix the mechanism as substitutional, substitutional–interstitial pair or neutral defect pair.

【 授权许可】

CC BY