Bulletin of materials science | |
Temperature dependence of current�?�voltage characteristics of Au/�?-GaAs epitaxial Schottky diode | |
S K Agarwal1  R Singh2  S K Arora2  Renu Tyagi1  D Kanjilal2  | |
[1] Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054, India$$Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054, IndiaSolid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054, India$$;Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India$$Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi 110 067, IndiaNuclear Science Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India$$ | |
关键词: Schottky barrier height; metalâ€�?�semiconductor interface; currentâ€�?�voltage characteristics; thermionic emission; ideality factor; lateral inhomogeneities in SBH.; | |
DOI : | |
学科分类:材料工程 | |
来源: Indian Academy of Sciences | |
【 摘 要 】
The influence of temperature on currentâ€�?�voltage (ð¼â€�?�ð�?��??) characteristics of Au/ð‘�??-GaAs Schottky diode formed on ð‘�??-GaAs epitaxial layer grown by metal organic chemical vapour deposition technique has been investigated. The dopant concentration in the epitaxial layer is 1 Ã�? 1016 cmâˆ�?3 . The change in various parameters of the diode like Schottky barrier height (SBH), ideality factor and reverse breakdown voltage as a function of temperature in the range 80âˆ�?300 K is presented. The variation of apparent Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneities in the Schottky barrier height in nanometer scale lengths at the metalâ€�?�semiconductor interface.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201912010228128ZK.pdf | 67KB | download |