Temperature dependence of current�?�voltage characteristics of Au/�??-GaAs epitaxial Schottky diode

Bulletin of materials science

S K Agarwal¹  R Singh²  S K Arora²  Renu Tyagi¹  D Kanjilal² 

[1] Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054, India$$Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054, IndiaSolid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054, India$$;Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India$$Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi 110 067, IndiaNuclear Science Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India$$

关键词: Schottky barrier height;    metalâ€�?�semiconductor interface;    currentâ€�?�voltage characteristics;    thermionic emission;    ideality factor;    lateral inhomogeneities in SBH.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The influence of temperature on currentâ€�?�voltage (𝐼â€�?�ð�?��??) characteristics of Au/ð‘�??-GaAs Schottky diode formed on ð‘�??-GaAs epitaxial layer grown by metal organic chemical vapour deposition technique has been investigated. The dopant concentration in the epitaxial layer is 1 Ã�? 10¹⁶ cm^âˆ�?3 . The change in various parameters of the diode like Schottky barrier height (SBH), ideality factor and reverse breakdown voltage as a function of temperature in the range 80âˆ�?300 K is presented. The variation of apparent Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneities in the Schottky barrier height in nanometer scale lengths at the metalâ€�?�semiconductor interface.

【 授权许可】

Unknown