Modeling Electromigration for Microelectronics Design

Journal of Computational Science and Technology

Hiren KOTADIA³  Xiao ZHU¹  Samjid MANNAN³  Yancheong CHAN²  Sha XU²  Chris BAILEY¹  Hua LU¹ 

[1] School of Computing and Mathematical Sciences, University of Greenwich;Department of Electronic Engineering, City University of Hong Kong;Physics Department, School of Natural & Mathematical Sciences, King's College London

关键词: Electromigration;    Simulation;    Shunt;    Solder Joint;   

DOI  :  10.1299/jcst.7.251

学科分类：地球科学(综合)

来源: Japan Academy

【 摘 要 】

References(26)Computer simulation of electromigration (EM) in microelectronics devices has been reviewed and a multi-physics numerical simulation method has been proposed and developed so that the electric current, temperature, stress can be solved simultaneously and the vacancy concentration can be predicted in a seamless framework. The design considerations for resisting EM is also discussed in this work and a shunt structure for solder joint pad is proposed and its potential for the reduction of EM risk is demonstrated.

【 授权许可】

Unknown