A complementary metal oxide semiconductor (CMOS) bandpass filter for cost-efficient radio frequency (RF) appliances

Journal of Engineering Research

Mastura Binti Omar¹  Mamun Bin Ibne Reaz¹  Sawal Hamid Md Ali¹  Noorfazila Kamal¹  Mohammad Arif Sobhan Bhuiyan² 

[1] Universiti Kebangsaan Malaysia

关键词: Active inductor;    band-pass filter;    complementary metal oxide semiconductor;    integrated circuits;    radio frequency.;   

DOI  :  

学科分类：社会科学、人文和艺术（综合）

来源: Kuwait University * Academic Publication Council

【 摘 要 】

A band pass filter is an inherent part of every radio frequency (RF) transceiver. The usage of spiral inductors in band-pass filters cannot overcome limitations such as loss due to parasitic effects, large chip area, low quality factor, less tenability, etc. Therefore, this paper presents an active inductor based design of a second order bandpass filter in 0.18μm complementary metal oxide semiconductor (CMOS) technology for 2.4 GHz radio frequency (RF) applications. The centre frequency of the proposed band pass filter can be adjusted from 1.86 GHz to 3.33 GHz with high Q factor of 250 at 2.45GHz. This filter dissipates only 3.407 mW at 1.5V supply voltage and occupies only 0.0014 mm2 chip area.

【 授权许可】

Unknown