Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure

IEICE Electronics Express

Kiyoto Takahata²  Hiroaki Sanjoh²  Hiroyuki Ishii¹  Shigeru Kanazawa²  Tomonari Sato³  Toshio Ito²  Ryuzo Iga¹  Wataru Kobayashi¹ 

[1] NTT Device Technology Laboratories, NTT Corporation;NTT Device Innovation Center, NTT Corporation;NTT Photonics Laboratories, NTT Corporation (present: Nippon Telegraph and Telephone East Corporation)

关键词: DML;    flip-chip;    100GbE;   

DOI  :  10.1587/elex.11.20141028

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)Cited-By(2)The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.

【 授权许可】

Unknown