A hybrid threshold self-compensation rectifier for RF energy harvesting

IEICE Electronics Express

Ning Ma¹  Zhangming Zhu¹  Lianxi Liu¹  Junchao Mu¹ 

[1] School of Microelectronics, Xidian University

关键词: energy harvester;    RF rectifier;    threshold compensation;   

DOI  :  10.1587/elex.11.20141000

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)This paper presents a novel highly efficient 5-stage RF rectifier in SMIC 65 nm standard CMOS process. To improve power conversion efficiency (PCE) and reduce the minimum input voltage, a hybrid threshold self-compensation approach is applied in this proposed RF rectifier, which combines the gate-bias threshold compensation with the body-effect compensation. The proposed circuit uses PMOSFET in all the stages except for the first stage to allow individual body-bias, which eliminates the need for triple-well technology. The presented RF rectifier exhibits a simulated maximum PCE of 30% at �?16.7 dBm (20.25 µW) and produces 1.74 V across 0.5 MΩ load resistance. In the circumstances of 1 MΩ load resistance, it outputs 1.5 V DC voltage from a remarkably low input power level of �?20.4 dBm (9 µW) RF input power with PCE of about 25%.

【 授权许可】

Unknown