期刊论文详细信息
IEICE Electronics Express | |
5GHz band low phase noise Si-CMOS oscillator using FBAR | |
Suguru Kameda1  Tuan Thanh Ta1  Shoichi Tanifuji1  Kazuo Tsubouchi1  Tadashi Takagi1  | |
[1] Research Institute of Electrical Communication, Tohoku University | |
关键词: film bulk acoustic resonator (FBAR); 5GHz; 90nm silicon complementary metal oxide semiconductor (Si-CMOS); low phase noise; oscillator; | |
DOI : 10.1587/elex.7.165 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(10)In this paper, low phase noise 5GHz oscillator is presented. This oscillators designed with 90nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130dBc/Hz at 1MHz offset.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300928333ZK.pdf | 451KB | download |