5GHz band low phase noise Si-CMOS oscillator using FBAR

IEICE Electronics Express

Suguru Kameda¹  Tuan Thanh Ta¹  Shoichi Tanifuji¹  Kazuo Tsubouchi¹  Tadashi Takagi¹ 

[1] Research Institute of Electrical Communication, Tohoku University

关键词: film bulk acoustic resonator (FBAR);    5GHz;    90nm silicon complementary metal oxide semiconductor (Si-CMOS);    low phase noise;    oscillator;   

DOI  :  10.1587/elex.7.165

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(10)In this paper, low phase noise 5GHz oscillator is presented. This oscillators designed with 90nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130dBc/Hz at 1MHz offset.

【 授权许可】

Unknown