A low phase noise FBAR based multiband VCO design

IEICE Electronics Express

Guoqiang Zhang²  Kenya Hashimoto¹  Haruichi Kanaya²  Ramesh K. Pokharel²  Keiji Yoshida²  Shuji Tanaka³  Masayoshi Esashi³  Abhay Kochhar³ 

[1] Graduate School of Engineering, Chiba University;Graduate School of Information Science and Electrical Engineering, Kyushu University;Graduate School of Engineering, Tohoku University

关键词: FBAR;    low phase noise;    low frequency instability;    multiband;    VCO;   

DOI  :  10.1587/elex.10.20130425

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)Cited-By(1)In this letter, design methodlogy of a low phase noise multiband film bulk acoustic resonator (FBAR) based voltage controlled oscillator (FBAR-VCO) is presented. It employs a 1.9GHz cross-coupled FBAR-VCO core, and extends oscillation to 0.65GHz, 0.98GHz, 1.96GHz and 3.92GHz by a divider and a multiplier. By analyzing the low frequency instability and proposing the solution based on a capacitor, cross-coupled architecture is employed in 1.9GHz FBAR-VCO core and phase noise degradation is extensively studied for extended frequencies. By considering the effect of transistors’ size on the Q-factor and impedance of FBAR, excellent phase noise and high loop gain are obtained. The post-layout simulation shows the proposed multiband FBAR-VCO achieves the lowest phase noise below −150dBc/Hz at 1MHz offset frequency.

【 授权许可】

Unknown