A CMOS semi-distributed step attenuator with low insertion loss and low phase distortion

IEICE Electronics Express

Yanlong Zhang¹  Yiqi Zhuang¹  Bo Wang¹  Zhenrong Li¹  Xiaojiao Ren¹  Xing Quan²  Hongyun Li¹ 

[1] School of Microelectronics, Xidian University;School of Mechano-Electronic Engineering, Xidian University

关键词: attenuator;    step attenuator;    insertion loss;    phase distortion;    CMOS;   

DOI  :  10.1587/elex.11.20140394

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)Cited-By(1)A semi-distributed step attenuator with low insertion loss and low phase distortion is presented with 0.18 µm BiCMOS process, which is implemented with a step distributed attenuator for 0�?7 dB attenuation with low insertion loss and two π-type switched resistive attenuation modules for large attenuation amplitude. The proposed attenuator has a maximum attenuation range of 0�?31 dB with 1 dB-increase at the frequency range of 10�?20 GHz and involves less than 8.6 dB of insertion loss. The RMS amplitude error and insertion phase at each attenuation state are less than 0.6 dB and 3°, respectively.

【 授权许可】

Unknown