NPN aided fast switching insulated gate bipolar transistor with a p-buffer layer

IEICE Electronics Express

Chunzao Wang¹  Bin Zhang² 

[1] Department of Physics and Electronic Information, Shaoxing University;Institute of Microelectronics & Optoelectronics, Zhejiang University

关键词: IGBT;    NFS-IGBT;    NPN aided;    fast switching;    P-buffer;   

DOI  :  10.1587/elex.11.20140294

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)A novel insulated gate bipolar transistor (IGBT) entitled NPN aided fast switching IGBT (NFS-IGBT) with a P-buffer layer is presented, which enhances the switching speed greatly. Compared with the conventional IGBT, double sided NPN structure is incorporated into the anode to facilitate the turn-off process. The proposed structure is verified by two-dimensional mixed device-circuit simulation, which indicates that the turn-off time is drastically reduced to one third of the conventional value at the expense of acceptable increase of on-state voltage drop. The tradeoff performance also shows great improvement for the new structure.

【 授权许可】

Unknown