| IEICE Electronics Express | |
| Ku band 2 watt TR chip for phased array based on GaAs technology | |
| Lei Li1  Ziqiang Yang2  Zhe Chen1  Ye Yuan1  Yong Fan1  | |
| [1] Key Lab of Fundamental Science, School of Electronic Engineering, University of Electronic Science and Technology of China;Research Institute Electronic Science and Technology of University of Electronic Science and Technology of China | |
| 关键词: switch; TR chip; GaAs; | |
| DOI : 10.1587/elex.13.20160086 | |
| 学科分类:电子、光学、磁材料 | |
| 来源: Denshi Jouhou Tsuushin Gakkai | |
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【 摘 要 】
References(11)Cited-By(1)A Ku-band transceiver chip (TR chip), which can be used for the phased array system, is presented in this paper. It includes a high power amplifier (HPA), a low noise amplifier (LNA) and two switches. The transmitting chain can provide over 2 watt (W) RF output power and 14 dB gain, meanwhile the receiving chain shows less than 3 dB noise figure and 25 dB gain in the frequency range of 15 to 17.5 GHz. A novel switch based on GaAs pHEMT process is also proposed, which can handle over 2 W RF output power without sacrificing the performance of the receiving chain. The size of the TR chip is 3 mm × 3 mm.
【 授权许可】
Unknown
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| RO201911300917544ZK.pdf | 191KB |
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