Velocity dispersion in GaN-based surface acoustic wave filters on (0001) sapphire substrates

IEICE Electronics Express

Naoteru Shigekawa²  Haruki Yokoyama²  Kazumi Nishimura²  Kohji Hohkawa¹  Kenji Shiojima² 

[1] Department of Engineering, Kanagawa Institute of Technology;Photonics Laboratories, Nippon Telegraph and Telephone Corporation

关键词: GaN;    sapphire;    surface acoustic wave;    SAW;    velocity dispersion;   

DOI  :  10.1587/elex.2.495

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(12)Cited-By(1)We fabricated surface acoustic wave (SAW) filters on three nominally 2-µm-thick undoped GaN layers grown on (0001) sapphire substrates. We extracted SAW velocities for frequencies of the central and subsidiary peaks in the |S21| spectra by applying the δ-function model. We further obtained thicknesses of respective GaN layers by analysing their reflectivity spectra, and established the SAW velocity dispersion. The respective dispersion data were found to lie close to each other, which suggests that characteristics of GaN-based SAW devices can be designed with improved accuracy.

【 授权许可】

Unknown