Analytic input matching for millimeter wave LNA in 90nm CMOS technology

IEICE Electronics Express

Fabien Ndagijimana³  Mahmoud Kamarei¹  Javad Yavand Hasani² 

[1] Electrical and computer engineering school of University of Tehran;Electrical and computer engineering school, University of Tehran, MINATEC -University Joseph Fourier;MINATEC -University Joseph Fourier

关键词: LNA;    millimeter wave;    90nm CMOS;    input matching;   

DOI  :  10.1587/elex.4.472

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)An analytic input matching technique for low noise amplifiers (LNA) has been presented. This method has been developed to design of cascode LNA for millimeter wave applications in modern CMOS technologies. Unlike the conventional analytic matching [1], the accurate transistor model used in our analysis, leads to acceptable accuracy in this frequency range. The analysis results have been used in design of a 30GHz LNA for STMicroelectronics 90nm digital CMOS process. Simulation in foundry design kit shows excellent accuracy of proposed method in comparison with the conventional method. The designed LNA have 10dB power gain with 5mW DC power consumption.

【 授权许可】

Unknown