Realization of 70-nm T-gate InP-based PHEMT for MMW low noise applications

IEICE Electronics Express

Mo Jiang-Hui¹  Cui Yu-Xing¹  Luo Xiao-Bin²  Wang Zhi-Ming²  Lv Xin²  Fu Xing-Chang¹  Hu Zhi-Fu¹  Sun Xi-Guo¹ 

[1] National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute;Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology

关键词: InP;    PHEMTs;    InAlAs/InGaAs;    low noise;    millimeter wave;   

DOI  :  10.1587/elex.12.20141174

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(15)Cited-By(2)70-nm T-gate InP-based low noise In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistor (PHEMT) with well-balanced cutoff frequency ft and maximum oscillation frequency fmax were designed and fabricated. DC, RF, and noise characterizations are demonstrated. The maximum saturation current density Idss and maximum extrinsic transconductance gm,max are measured to be 894 mA/mm and 1640 mS/mm, respectively. And the extrapolated ft and fmax based on inflection point were 247 GHz and 392 GHz, respectively. Due to the disadvantages of traditionally used Y-factor method, the new cold-source method was adopted to measure the noise parameters. The minimum noise figure (NFmin) is 1 dB at 30 GHz associated with a gain of 15 dB at Vds of 0.8 V and Ids of 17 mA. These excellent results make this InP-based PHEMT one of the most suitable devices for millimeter wave low noise applications.

【 授权许可】

Unknown