Vertical stack array of one-time programmable nonvolatile memory based on pn-junction diode and its operation scheme for faster access

IEICE Electronics Express

Seongjae Cho¹  Sungjun Kim²  Byung-Gook Park²  Sunghun Jung² 

[1] Department of Electronic Engineering, Gachon University;Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University

关键词: vertical stack;    one-time programmable (OTP) memory;    nonvolatile memory (NVM);    pn-junction diode;    three-dimensional (3-D) architecture;    metal-insulator-semiconductor (MIS);   

DOI  :  10.1587/elex.11.20131041

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(18)In this work, a three-dimensional (3-D) architecture of one-time programmable (OTP) nonvolatile memory (NVM) arrays is introduced and its viable process integration and operation method are schemed. Vertical stack architecture is highly persued for higher-level integration and NVMs based on devices free from transistors and charge trapping layers would be one of the candidates. In this work, in an effort for the NVM technology trend, architecture, fabrication process, and operation scheme for faster data access are studied in depth. Silicon (Si) pn-junction diode is focused by its virtues of cost-effectiveness, process maturity, and compatibility to peripheral Si CMOS circuits.

【 授权许可】

Unknown