Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory

Materials

Yu-Hsien Lin¹  Yi-Yun Yang² 

[1] Department of Electronic Engineering, National United University, No. 1, Lienda, Miaoli 36003, Taiwan; E-Mail

关键词: TaN-Al₂O₃-HfSiOx-SiO₂-Silicon (TAHOS);    nonvolatile memory (NVM);    dipole engineering;    work function;   

DOI  :  10.3390/ma8085112

来源: mdpi

【 摘 要 】

This paper presents a novel TaN-Al₂O₃-HfSiO_x-SiO₂-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiO_x/SiO₂ interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer at the tunnel oxide–charge storage layer interface increases the programming speed and provides satisfactory retention. This NVM device has a high program/erase (P/E) speed; a 2-V memory window can be achieved by applying 16 V for 10 μs. Regarding high-temperature retention characteristics, 62% of the initial memory window was maintained after 10³ P/E-cycle stress in a 10-year simulation. This paper discusses the performance improvement enabled by using dipole layer engineering in the TAHOS NVM.

【 授权许可】

CC BY   
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