A high supply voltage bandgap reference circuit using drain-extended MOS devices

IEICE Electronics Express

Tag Gon Kim¹  Geun Rae Cho¹  Kyung Woon Hwang² 

[1] Department of Electrical Engineering, KAIST;Coolpower Technology Inc.

关键词: bandgap reference;    high-voltage;    drain extended CMOS;    DEMOS;    BGR;   

DOI  :  10.1587/elex.10.20130142

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(9)A bandgap reference circuit that uses high-voltage drain-extended MOS (DeMOS) devices is presented for high supply voltage application without using a voltage regulator for the bandgap core circuit. The bandgap reference circuit was fabricated using commercially available 0.18µm high-voltage DeMOS technology. Measurement result of the chip shows that the reference voltage change rate for VDD variation from 5V to 30V and for the temperature variation from -40°C to +140°C were 1.16mV/V and 0.84mV/°C, respectively. The measured reference voltage with the supply voltage of 15V at room temperature was 2.487V. The current consumption and the active area were 3.2µA and 320×345µm2, respectively.

【 授权许可】

Unknown