A bandgap reference with resistance variation compensated

IEICE Electronics Express

Joo-Seong Kim¹  Bai-Sun Kong¹  Ja-Hyuck Koo¹  Jea-Ho Lee¹ 

[1] School of Information and Communication Engineering, Sungkyunkwan University

关键词: bandgap reference;    voltage reference;    process compensation;    process variation;    VBE generation;   

DOI  :  10.1587/elex.8.1602

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)This paper describes a novel high-precision bandgap reference with resistance variation compensated. Novel process-compensated emitter current generator allows a substantial reduction on VBE variation, resulting in an improved accuracy of the proposed bandgap reference. Comparison results in a 0.13µm CMOS technology indicated that the proposed voltage reference achieved up to 62% improvement in terms of accuracy, as compared to conventional bandgap reference. Process variation of reference voltage is shown to be ±3.67mV for all process corners without any post-process trimming.

【 授权许可】

Unknown