A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer

IEICE Electronics Express

Shifeng Zhang¹  Wei Zhang¹  Fang Liu¹  Yan Han¹  Huanting Wu¹  Dazhong Zhu¹  Bin Zhang¹ 

[1] Institute of Microelectronics & Optoelectronics, Zhejiang University

关键词: IGBT;    DR-IGBT;    diffusion remnant layer;    breakdown voltage;    light punch-through;   

DOI  :  10.1587/elex.10.20130719

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant (DR) layer (DR-IGBT) is proposed in this letter. The DR layer in the emitter side which is formed by grinding after ultra-deep N+ diffusion helps to stored the carrier and improves the on-state voltage drop (Vce(SAT)). The DR-IGBT has a better trade-off between the breakdown voltage (BV) and Vce(SAT) than the carrier stored trench bipolar transistor (CSTBT). The doping profile of diffusion remnant layer makes the junction of the p-base/DR layer nearly linearly graded junction, which does not decline the BV too much. The depth of the diffusion remnant layer and N+ diffusion layer less impacts BV and Vce(SAT) unless the diffusion depth is reduced.

【 授权许可】

Unknown