Low Temperature Deposition of SiNx Thin Films by the LPCVD Method

Croatica Chemica Acta

Gamulin, Ozren¹  Tijanić, Zdenko⁴  Bogdanović-Radović, Ivančica⁴  Chiasera, Alesandro³  Ristić, Mira⁴  Marciuš, Marijan⁴  Ristić, Davor⁴  Ivanda, Mile⁴  Musić, Svetozar⁴  Righini, Giancarlo Cesare²  Ferrari, Maurizio³  Furić, Krešimir⁴ 

[1] Medical School, Department of Physics and Biophysics, University of Zagreb, Šalata 3b, 10 000, Zagreb, Croatia;MDF Lab, “Nello Carrara�? Institute of Applied Physics (IFAC-CNR), Via Madonna del Piano 10, 50019 Sesto Fiorentino, Firenze, Italy;CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123 Trento, Italy;Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia

关键词: silicon nitride;    thin film;    LPCVD method;    Raman;    FTIR;   

DOI  :  

学科分类：化学（综合）

来源: Croatica Chemica Acta

【 摘 要 】

Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Silane diluted in argon and ammonia were used as the reactant gasses, and the low temperature deposition at 570 °C...

【 授权许可】

Unknown