Multi-level programming of memristor in nanocrossbar

IEICE Electronics Express

Xun Yi¹  Xuan Zhu¹  Chunqing Wu²  Junjie Wu¹  Yuhua Tang¹ 

[1] State Key Laboratory of High Performance Computing, National University of Defense Technology;School of computer, National University of Defense Technology

关键词: memristor;    multi-level;    nanocrossbar;    memory;    HSPICE;   

DOI  :  10.1587/elex.10.20130013

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)Utilizing memristor to obtain multi-level memory in nano-crossbar is a promising approach to enhance the memory density. In this paper, we proposed a solution for multi-level programming of memristor in nanocrossbar, which can be implemented on nanocrossbar without the need for extra selective devices. Meanwhile, using a general device model, this solution is demonstrated to be adaptive to a wide range of memristors that have been experimentally fabricated through HSPICE simulation.

【 授权许可】

Unknown