期刊论文详细信息
IEICE Electronics Express | |
Multi-level programming of memristor in nanocrossbar | |
Xun Yi1  Xuan Zhu1  Chunqing Wu2  Junjie Wu1  Yuhua Tang1  | |
[1] State Key Laboratory of High Performance Computing, National University of Defense Technology;School of computer, National University of Defense Technology | |
关键词: memristor; multi-level; nanocrossbar; memory; HSPICE; | |
DOI : 10.1587/elex.10.20130013 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(8)Utilizing memristor to obtain multi-level memory in nano-crossbar is a promising approach to enhance the memory density. In this paper, we proposed a solution for multi-level programming of memristor in nanocrossbar, which can be implemented on nanocrossbar without the need for extra selective devices. Meanwhile, using a general device model, this solution is demonstrated to be adaptive to a wide range of memristors that have been experimentally fabricated through HSPICE simulation.
【 授权许可】
Unknown
【 预 览 】
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RO201911300655485ZK.pdf | 465KB | download |