Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing

IEICE Electronics Express

Kuniyuki Kakushima¹  Kazuo Tsutsui¹  Nobuyuki Sugii¹  Hiroshi Iwai²  Jin-Aun Ng²  Takeo Hattori²  Parhat Ahmet² 

[1] Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology;Frontier Collaborative Research Center

关键词: La2O3;    PDA;    nMISFET;    mobility;    interface-state density;   

DOI  :  10.1587/elex.3.316

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(13)Cited-By(8)In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different post deposition annealing (PDA) conditions; annealing temperature (300°C - 600°C) and ambient (N2 or O2). High effective mobility of 312cm2/Vs and low interface-state density of 6 × 1010cm-2/eV were obtained from La2O3 nMISFET with equivalent oxide thickness (EOT) of 1.7nm after PDA at 300°C in N2 ambient for 10 minutes. Gate leakage current density was 6.8 × 10-6A/cm2. We found that peak effective mobility decreased with increasing anneal temperature, regardless of annealing ambient. We also observed a monotonous relationship between effective mobility and interface-state density. This behavior suggests that lowering the interface-state density is essential to obtain high mobility in the high-κ/Si structure.

【 授权许可】

Unknown