Subthreshold 8T SRAM sizing utilizing short-channel Vt roll-off and inverse narrow-width effect

IEICE Electronics Express

Ik Joon Chang²  Joon-Sung Yang¹ 

[1] Department of Semiconductor Systems Engineering, SungKyunKwan University;Department of Electronic and Radio Engineering, Kyunghee University

关键词: subthreshold SRAM;    8T SRAM;    SRAM sizing;   

DOI  :  10.1587/elex.13.20160020

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(10)8T SRAM have been considered for robust subthreshold SRAM design. Their subthreshold operation was successfully demonstrated through real silicon measurements. However, Monte-Carlo simulation results show that this SRAM still may not deliver sufficient reliability in subthreshold operation. In this work, we overcome this problem by properly sizing SRAM transistors. We utilize short-channel Vt roll-off and inverse narrow-width effect for the sizing. Since minimum geometry transistors are employed in the SRAM bit-cell, these effects can have profound impact on SRAM stability. Hence, the proposed approach provides an efficient way to increase the yield of the 8T subthreshold SRAMs.

【 授权许可】

Unknown