期刊论文详细信息
IEICE Electronics Express
Floating body CMOS phototransistor memory
Koichiro Kishima1  Nick K. Hon2  Bahram Jalali2 
[1] Core Device Development Group, Sony Corporation;University of California, Los Angeles
关键词: detectors;    optical memories;    integrated optics;   
DOI  :  10.1587/elex.7.1790
学科分类:电子、光学、磁材料
来源: Denshi Jouhou Tsuushin Gakkai
PDF
【 摘 要 】

References(9)Cited-By(1)An optoelectronic CMOS memory technology is proposed where photon induced floating body effect stimulates switching and hysteresis in the transistor. The floating body effect is induced by exceedingly few carriers generated by two photon absorption. In this paper we present the structure of proposing device and numerically validated the device by Atlas device simulator from SILVACO Corporation.

【 授权许可】

Unknown   

【 预 览 】
附件列表
Files Size Format View
RO201911300563750ZK.pdf 437KB PDF download
  文献评价指标  
  下载次数:8次 浏览次数:23次