2-µm wavelength tunable distributed Bragg reflector laser

IEICE Electronics Express

Takuya Kanai¹  Mikitaka Itoh¹  Naoki Fujiwara¹  Hiroyuki Ishii¹  Yoshitaka Ohiso¹  Makoto Shimokozono¹ 

[1] NTT Device Technology Laboratories, NTT Corporation

关键词: semiconductor laser;    tunable laser;    gas sensing;   

DOI  :  10.1587/elex.13.20160655

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(10)We demonstrate a tunable distributed Bragg reflector (DBR) laser diode operating in the 2-µm region. A strained InGaAs multi-quantum well is used for the active region, and InGaAs is used for the passive region in the 2-µm DBR laser. The fabricated DBR laser emits a single-mode continuous wave at 2.02 µm, and the output power exceeds 6 mW at room temperature. A wavelength tuning range of about 10 nm is achieved by controlling of injection currents to the DBR regions.

【 授权许可】

Unknown