期刊论文详细信息
IEICE Electronics Express | |
2-µm wavelength tunable distributed Bragg reflector laser | |
Takuya Kanai1  Mikitaka Itoh1  Naoki Fujiwara1  Hiroyuki Ishii1  Yoshitaka Ohiso1  Makoto Shimokozono1  | |
[1] NTT Device Technology Laboratories, NTT Corporation | |
关键词: semiconductor laser; tunable laser; gas sensing; | |
DOI : 10.1587/elex.13.20160655 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(10)We demonstrate a tunable distributed Bragg reflector (DBR) laser diode operating in the 2-µm region. A strained InGaAs multi-quantum well is used for the active region, and InGaAs is used for the passive region in the 2-µm DBR laser. The fabricated DBR laser emits a single-mode continuous wave at 2.02 µm, and the output power exceeds 6 mW at room temperature. A wavelength tuning range of about 10 nm is achieved by controlling of injection currents to the DBR regions.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300557280ZK.pdf | 828KB | download |