Design of local ESD clamp for cross-power-domain interface circuits

IEICE Electronics Express

Yu-Kai Chiu¹  Shuan-Yu Yueh¹  Chun-Yu Lin¹ 

[1] Department of Electrical Engineering, National Taiwan Normal University

关键词: cross-power-domain interface circuits;    electrostatic discharge (ESD);   

DOI  :  10.1587/elex.13.20160806

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(12)To effectively protect the cross-power-domain interface circuits from electrostatic discharge (ESD) damages, a PMOS-based local ESD clamp was proposed in this work. The test circuits of prior and proposed designs have been implemented in silicon chip. The proposed design has the small chip area, low leakage current, and low peak transient voltage; therefore, it can help to reduce the overstress voltages across the interface circuits under ESD tests. With the better performances, the proposed local ESD clamp can be a better solution for cross-power-domain interface circuits.

【 授权许可】

Unknown