Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate | Science Publications

American Journal of Applied Sciences

Hatem Ezzaouia¹  Afrah Bardaoui¹  Isabelle Sagne¹  Mohamed Lajnef¹  Radwan Chtouroua¹ 

关键词: GaAs;    ALE technique;    porous silicon;    photoluminescence;   

DOI  :  10.3844/ajassp.2008.605.609

学科分类：自然科学（综合）

来源: Science Publications

【 摘 要 】

GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to strain effect resulting from the lattice mismatch between GaAs and porous Si substrate.

【 授权许可】

Unknown