Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band

IEICE Electronics Express

Yasser Mafinejad¹  Abbas Z. Kouzani¹  Khalil Mafinezhad²  Majid Zarghami² 

[1] School of Engineering, Deakin University;MEMS and RF MEMS Research Group, School of Electrical and Computer Engineering, Sadjad Institute of Higher Education

关键词: meander type beam;    LC resonant frequency;    discontinuity CPW;    isolation;    insertion loss;   

DOI  :  10.1587/elex.10.20130746

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(9)Cited-By(1)This paper presents a wide band RF MEMS capacitive switch. The LC resonant frequency is reduced from mm wave to X band frequencies at down-state by using a meander type membrane, with the frequency band is being increased by adding two short high impedance lines at both ends of coplanar waveguide (CPW). Moreover, this acts as T-match circuit in up-state position and improves the matching. Simulation results demonstrate that the capacitance ratio reduces from 50 to 21.4, S21 and S11 are less than −10dB for the entire frequency band at down-state and up-state. Also, a comprehensive and complete electric model of the switch is proposed and simulation results agree well with the characteristics of the physical structure of the MEMS switch. Vpull-in and Vpull-out of this switch are 8.1V and 0.3V, respectively.

【 授权许可】

Unknown