Modeling and optimization of noise coupling in TSV-based 3D ICs

IEICE Electronics Express

Gang Dong¹  Yingbo Zhao¹  Yintang Yang¹ 

[1] School of Microelectronics, Xidian University

关键词: 3D integration;    though silicon via (TSV);    two-port network;    equivalent impedance;    noise coupling reduction;   

DOI  :  10.1587/elex.11.20140797

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(4)This paper first proposes an impedance-level model of coupling channel between through silicon vias (TSVs) based on the two-port network theory. In order to get an accurate estimation of the coupling level from TSV-TSV in the early designing stage, we convert the impedance parameters of the model into the ABCD matrix to derive the formula of coupling coefficient, and the accuracy of the proposed formula is validated by comparing with 3D full-wave simulations. Furthermore, a design technique of optimizing the coupling between TSVs is proposed, and through SPICE simulations the proposed technique shows a desirable result to reduce the TSV-TSV coupling.

【 授权许可】

Unknown