Reading and writing operations of memory device in micro-electromechanical resonator

IEICE Electronics Express

Atsushi Yao¹  Takashi Hikihara¹ 

[1] Department of Electrical Engineering, Kyoto University

关键词: MEMS resonator;    memory device;    reading operation;    writing operation;    nonlinear;   

DOI  :  10.1587/elex.9.1230

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(14)Cited-By(2)Micro-electromechanical resonators substantially exhibit bistable and hysteretic response when nonlinear characteristics appear. Badzey et al. reported that the nonlinear micro-electromechanical resonators can be used as a mechanical 1bit memory. Based on their results, the authors propose reading and writing operations of the memory device. The reading and writing operations imply a displacement measurement and a switching of two stable periodic vibrations, respectively. In this paper, we realize a displacement measurement along an approach avoiding supplemented sensors. In addition, we achieve the switching operation between two coexisting periodic states by a displacement feedback control.

【 授权许可】

Unknown