Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

IEICE Electronics Express

Yasuhiko Ishikawa¹  Shinichi Saito² 

[1] Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo;Nano Research Group, Faculty of Physical Sciences and Engineering, University of Southampton

关键词: Ge photonic devices;    Si photonics;    optical interconnects;    photodetectors;    light sources;    optical modulators;   

DOI  :  10.1587/elex.11.20142008

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(87)Cited-By(4)This paper reviews near-infrared Ge photonic devices on Si towards photonic-electronic integrated circuits on a Si platform, which play a significant role in short-reach optical interconnects. In particular, applications of Ge epitaxial layers on Si to photodetectors, light emitters and optical modulators are described.

【 授权许可】

Unknown