Value-dependence of SRAM leakage in deca-nanometer technologies

IEICE Electronics Express

Tohru Ishihara¹  Maziar Goudarzi¹ 

[1] System LSI Research Center, Kyushu University

关键词: process variation;    within-die variation;    SRAM;    leakage;    nanometer technology;   

DOI  :  10.1587/elex.5.23

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)Within-die process variation increases with technology scaling in nanometer era. Due to uncorrelated random variations in the threshold voltage (Vth), neighboring transistors in a 6-T SRAM have different Vth and dissipate different subthreshold leakages. Since 3 transistors leak when the cell stores a 1 and the other 3 leak when it stores a 0, total cell leakage depends on its stored value. Using Monte Carlo simulations, we show that this difference averages 46% at a variation of 58% in Vth. This phenomenon can be used to reduce leakage of SRAM-based memories by value control.

【 授权许可】

Unknown