Design and analysis of the reference cells for STT-MRAM

IEICE Electronics Express

Cong Li¹  Junlin Bao¹  Weisheng Zhao²  Xin Xiang³  Yiqi Zhuang¹  Hualian Tang¹  Li Zhang¹ 

[1] School of Microelectronic, Xidian Univ.;IEF, Univ.;Engineering College, Air Force Engineering Univ.

关键词: STT-MRAM;    Pre-Charge sensing;    MTJ;    high reliability;   

DOI  :  10.1587/elex.10.20130352

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)STT-MRAM is currently under intense R&D efforts thanks to its high performances such as non-volatility, fast access speed and high density etc. However, it suffers from intrinsic stochastic switching behaviors and high sensitivity to process variations, which make low power reliable reading become a big challenge. This letter presents three designs of reference cell for STT-MRAM sensing. By using an accurate compact model of STT-MRAM cell, we analyze and compare their performances in terms of power, reliability and area.

【 授权许可】

Unknown