A high-sensitive digital photosensor using MOS interface-trap charge pumping

IEICE Electronics Express

Keiichiro Kagawa¹  Akihiro Uehara¹  Takashi Tokuda¹  Masahiro Nunoshita¹  Jun Ohta¹ 

[1] Graduate School of Materials Science, Nara Institute of Science and Technology

关键词: PFM photosensor;    retinal prosthesis;    pixel-level ADC;    charge pumping;    interface-traps;   

DOI  :  10.1587/elex.1.556

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)A high-sensitive CMOS photosensor based on a pulse frequency modulation (PFM) scheme is presented. We propose and demonstrate the high-sensitive PFM photosensor, whose output frequency is proportionate to the incident light intensity, that utilizes MOS interface-trap charge pumping (ITCP) as a frequency-controlled ultra-low current. The proposed pixel sensor consists of only 4 transistors: a transistor as an ultra-low current source; a sense amplifier transistor; a selection transistor; and, a reset transistor. The prototype device is fabricated using 0.6-µm standard CMOS technology. High sensitivity 4.0 × 105Hz/(W·m-2), which is larger than two orders of magnitude compared to previous works, was obtained.

【 授权许可】

Unknown