Millimeter-wave transmission line with through-silicon via for RF-MEMS devices

IEICE Electronics Express

Hiroshi Fukumoto²  Shinpei Ogawa²  Yukihiro Tahara¹  Takeshi Yuasa¹  Yoshio Fujii² 

[1] Information Technology R&D Center, Mitsubishi Electric Co.;Advanced Technology R&D Center, Mitsubishi Electric Co.

关键词: TSV;    RF-MEMS;    packaging;    millimeter-wave;   

DOI  :  10.1587/elex.10.20130565

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(23)Cited-By(2)We designed and fabricated a low-loss transmission line structure with through-silicon vias (TSVs) for use in the millimeter-wave region for three-dimensional packaging of radio frequency microelectromechanical system devices. High-frequency simulations were used to determine the optimum transmission line structure. A transformer was employed to compensate for the impedance mismatch between the TSVs and the coplanar waveguide. The proposed structure was fabricated using a combination of surface micromachining and the molten solder ejection method. The electrical properties of the TSVs and the transmission line were measured, and a low insertion loss of 0.7dB at 80GHz was achieved.

【 授权许可】

Unknown