Analysis and evaluation of coupling between adjacent TSVs with considering the discharging path

IEICE Electronics Express

Gang Dong¹  Yingbo Zhao¹  Yintang Yang¹  Junping Zheng¹ 

[1] School of Microelectronics, Xidian University

关键词: 3D integration;    through silicon via (TSV);    coupling noise;    discharging path;    doping concentration;   

DOI  :  10.1587/elex.12.20150089

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(5)Different from the conventional way to investigate the coupling between adjacent TSVs, we take the discharging path into consideration as the impedance of silicon substrate is actually finite. This paper first analyzes the discharging path which exists between the victim TSV and the silicon substrate, and then by transforming the tapped capacitor circuit into a RC parallel circuit for the discharging path, the frequency-dependent expressions of the parasitic elements in the discharging path are obtained. Furthermore, we vary the impedance of silicon substrate to evaluate the impact of discharging path on the coupling noise. Through simulations, it indicates that the coupling noise on the victim can be reduced significantly by lowering the impedance of discharging path.

【 授权许可】

Unknown