Variation-tolerant CuxSiyO-based RRAM for low power application

IEICE Electronics Express

Zhongyu Bi¹  Gang Jin¹  Yinyin Lin¹  Qingtian Zou²  Ryan Huang²  Na Yan¹  Hao Min¹  Wenxiang Jian¹  Jingang Wu² 

[1] ASIC&System State Key Lab, Dept. of Microelectronics, Fudan University;SOC Technology Development Center, Semiconductor Manufacturing International Corp.

关键词: RRAM;    variation-tolerant;    low power;   

DOI  :  10.1587/elex.9.1654

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)An embedded Non-Volatile Resistive Memory IP with low power and high reliability is presented for application in RFID tags. The logic-based CuxSiyO resistive RAM employs a 2-transistor-2-resistor (2T2R) cell structure to reduce process variation and expand sensing margin. The feedback mechanism is adopted in the write process to prevent power consumption. A 64Kb RRAM IP is embedded in RFID tag test chip in 0.13µm logic process. Test results indicate that 6X margin is attained in resistance distribution at worst case and 22.2µW program power is achieved, which demonstrates the low power and variation-tolerant robustness.

【 授权许可】

Unknown