Equivalent circuit model of millimeter-wave AlGaN/GaN HEMTs

IEICE Electronics Express

Dun Shaobo¹  Lv Xin²  Yu Weihua²  Luo Xiaobin²  Lv Yuanjie¹  Feng Zhihong¹ 

[1] National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute;Laboratory of Millimeter-wave and Terahertz Technology, Beijing Institute of Technology

关键词: AlGaN/GaN;    high electron mobility transistor;    large signal model;    millimeter-wave;   

DOI  :  10.1587/elex.11.20140613

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(5)A 2 × 50 AlGaN/GaN High Electron Mobility Transistor (HEMT) is designed and fabricated with 0.1 µm gate-length and 2 µm source-drain distance in the paper. The maximum frequency of oscillation (fmax) may reach 177 GHz. The small signal equivalent circuit model is obtained by using the open-short test structure and reverse cut-off method. A novel large signal model is constructed based on the SDD form. The new I-V and C-V expressions are proposed to complete nonlinear fitting accurately by contrasting the measure results of the GaN HEMT. The convergence of the model is good during the harmonic balance simulation. So this modeling method can be applied to millimeter-wave GaN HEMTs.

【 授权许可】

Unknown