Design of class E power amplifiers by using scalable electro-thermal GaN HEMT model

IEICE Electronics Express

Chuicai Rong¹  Bo Yan¹  Xiansuo Liu¹  Ruimin Xu¹  Tiedi Zhang¹  Yuehang Xu² 

[1] School of Electronic Engineering, University of Electronic Science and Technology of China;School of Physics and Electronic Information, Gannan Normal University

关键词: GaN HEMT;    large signal model;    scalable model;    class E power amplifier;   

DOI  :  10.1587/elex.14.20170806

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

In this paper, a scalable large signal GaN HEMT model including nonlinear thermal sub-circuit is described. Only two scalable parameters are needed in the Ids scalable model by introducing a simple correction factor. The established model can predict the I–V curves at different-in-size AlGaN/GaN HEMTs devices accurately. Small signal S-parameters and large signal load pull tests with on-wafer measurement is used to further validate the proposed model. Finally, the proposed scalable model is used to design a broadband high efficiency continuous class-E power amplifier (PA). Experimental results show that this class E PA is realized from 2.5–3.5 GHz with drain efficiency of 60%–70%, over 8.2 dB gain and over 35.2 dBm output by using a GaN HEMT with 1.25 mm total gate width. The results show that the proposed model is useful for high efficiency amplifier design.

【 授权许可】

CC BY