Displacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and Annealing | Science Publications

American Journal of Applied Sciences

A. R. Chelyadinskii¹  V. Y. Yavid¹  M. Jadan¹ 

关键词: silicon;    Ion Implantation;    Radiation Defects;    Watkins Substitution;   

DOI  :  10.3844/ajassp.2005.910.913

学科分类：自然科学（综合）

来源: Science Publications

【 摘 要 】

The process of boron displacement from the nodes into interstitial positions of interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with the help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing of the ionization level in the implanted layer during implantation or annealing (additional low-energy electron irradiation) the replacement process may be suppressed

【 授权许可】

Unknown