G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems

IEICE Electronics Express

Mehdi Saremi¹  Hossein Aghababa¹  Vahid Moalemi¹  Behjat Forouzandeh¹  Behzad Ebrahimi¹ 

[1] School of ECE, University of Tehran

关键词: G4-FET;    adaptive neuro-fuzzy training systems;    semiconductor industry;    circuit simulation;    HSPICE model;   

DOI  :  10.1587/elex.9.881

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(10)Cited-By(8)G4-FET has attracted attention as an emerging device for the future generations of semiconductor industry. This paper is intended to propose a model representing the characteristics of G4-FET device in order to perform circuit simulations. The modeling approach is established upon the neuro-fuzzy technique whose main strength is that they are universal approximators with the ability to solicit interpretable IF-THEN rules. The accuracy of the proposed model is verified by HSPICE circuit simulations.

【 授权许可】

Unknown