Suppression of plasma-induced fluorine damage in P-HEMTs using strained InSb barrier

IEICE Electronics Express

Hiroyuki Uchiyama¹  Takafumi Taniguchi¹  Makoto Kudo¹ 

[1] Central Research Laboratory, Hitachi Ltd.

关键词: RIE;    plasma;    damage;    fluorine;    P-HEMT;    SIMS;    InSb;   

DOI  :  10.1587/elex.1.513

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(1)Cited-By(4)We propose a P-HEMT structure with a strained InSb barrier inserted and investigate its resistivity against plasma-induced fluorine damage with Hall measurements and a SIMS evaluation. The fluorine intrusion into the active layers of the P-HEMT during the RIE process was greatly suppressed by the ultra thin InSb barrier layer and the values of the carrier density and electron mobility improved by 43% and 35% from those for a conventional P-HEMT. After thermal annealing, the number of accumulated fluorine atoms in the δ-doped layer also decreased and the carrier density and electron mobility improved by 36% and 11% from those for a conventional P-HEMT. This indicated the strained InSb barrier was very effective in suppressing the plasma-induced fluorine damage in the P-HEMT.

【 授权许可】

Unknown