Plasma-Induced Fluorine Damage in P-HEMT Caused by C2F6/CHF3 RIE Plasma

IEICE Electronics Express

Hiroyuki Uchiyama¹  Takafumi Taniguchi¹ 

[1] Central Research Laboratory, Hitachi Ltd.

关键词: RIE;    plasma;    damage;    fluorine;    P-HEMT;    SIMS;   

DOI  :  10.1587/elex.1.46

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(5)Cited-By(4)Fluorine atoms intruded into the channel layer in P-HEMT and degraded its carrier density and electron mobility during the SiO2 RIE process. Thermal annealing at 300°C for 10 minutes was rather effective for recovering from this plasma damage. Our SIMS investigation revealed that the mechanism of this recovery was the removal of fluorine atoms from the channel layer and their accumulation in the δ-doped Si layer. Ionized impurities in the channel layer were removed, and electron mobility was significantly recovered. However, the carrier density was recovered to a lesser degree than that of the electron mobility because of the neutralization of Si donors in the δ-doped layer caused by the fluorine accumulation.

【 授权许可】

Unknown