The effects of extended depletion region on noise modeling of HEMT's

IEICE Electronics Express

Mukunda B. Das²  S.S. Islam³  Meena Mishra¹  R. Muralidharan³  Harsh³ 

[1] Solid State Physics Laboratory;Mukunda B. Das is an Emeritus Professor of Electrical Engineering, The Pennsylvania State University;Department of Applied Sciences and Humanities, Jamia Millia Islamia

关键词: MODFETs;    HEMTs;    Noise Modeling;   

DOI  :  10.1587/elex.2.81

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(5)In this work we have extended the analytical model on noise, by taking into account the effect of the depletion region that extends into the gate to drain spacing. The model utilizes the charge-control model based on analytical functions that relate 2-D electron gas concentration and the Fermi level. The effects of this high field extension region on the noise performance of the device have been investigated. Using the proposed model, the noise characteristics of two HEMTs are analytically calculated and compared with the measured data. It is observed that the contribution of the extended depletion region to the overall device noise is rather significant and it should not be ignored. The theoretical predictions based on the model are found to be in good agreement with the measured noise data.

【 授权许可】

Unknown