Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors

Proceedings

Tamburini, Cinzia¹  Romani, Aldo²  Crescentini, Marco³  Belsito, Luca⁴  Roncaglia, Alberto⁵ 

[1] Advanced Research Centre on Electronic Systems (ARCES), Cesena Campus, University of Bologna, 47522 Cesena, Italy;Author to whom correspondence should be addressed.;Department of Electrical, Electronic and Information Engineering (DEI) G. Marconi, Cesena Campus, University of Bologna, 47522 Cesena, Italy;Institute for Microelectronics and Microsystems (IMM), Bologna Unit, National Research Council of Italy, 40129 Bologna, Italy;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018

关键词: DETF;    MEMS;    readout circuit;    strain sensor;    current conveyor;   

DOI  :  10.3390/proceedings2130973

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.

【 授权许可】

CC BY