Proceedings | |
UV-LED Photo-Activated Room Temperature NO2 Sensors Based on Nanostructured ZnO/AlN Thin Films | |
Majid, Nurhalis1  Fabrega, Cristian2  Granz, Tony3  Temming, Marius4  Xu, Jiushuai5  Lilienkamp, Gerhard6  Qomaruddin,7  | |
[1] Authors to whom correspondence should be addressed.;Institut für Energieforschung und Physikalische Technologien (IEPT), TU Clausthal, 38678 Clausthal, Germany;Institute of Semiconductor Technology (IHT), TU Braunschweig, 38106 Braunschweig, Germany;Laboratory for Emerging Nanometrology (LENA), TU Braunschweig, 38106 Braunschweig, Germany;MIND-IN2UB, Department of Electronic and Biomedical Engineering, University of Barcelona, 08007 Barcelona, Spain;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9â12 September 2018;Research Center for Physics, Indonesian Institute of Sciences (LIPI), Tangerang Selatan 15314, Indonesia | |
关键词: gas sensor; ZnO nanowire; nanostructure; photo-activation; AlN-on-Si; NO2 detection; | |
DOI : 10.3390/proceedings2130888 | |
学科分类:社会科学、人文和艺术(综合) | |
来源: mdpi | |
【 摘 要 】
UV-light emitting diodes (395â278 nm) were used to investigate the gas sensing attributes of planar and nanostructured ZnO/AlN thin films on Si substrate towards NO2 at room temperature. A significant increased sensitivity ((Rg â Ra)/Ra = 65.3 ppm NO2 in air) and a strong reduction in recovery time (Trec = 14 min) were already observed for the planar ZnO/AlN thin films under UV-B (305 nm) irradiation compared to the other UV wavelengths, while the device showed no obvious response in dark. By enlarging the surface-to-volume ratio of the sensors (i.e., creating nanostructured ZnO/AlN thin films), an increased response time is expected to be observed.
【 授权许可】
CC BY
【 预 览 】
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