UV-LED Photo-Activated Room Temperature NO2 Sensors Based on Nanostructured ZnO/AlN Thin Films

Proceedings

Majid, Nurhalis¹  Fabrega, Cristian²  Granz, Tony³  Temming, Marius⁴  Xu, Jiushuai⁵  Lilienkamp, Gerhard⁶  Qomaruddin,⁷ 

[1] Authors to whom correspondence should be addressed.;Institut für Energieforschung und Physikalische Technologien (IEPT), TU Clausthal, 38678 Clausthal, Germany;Institute of Semiconductor Technology (IHT), TU Braunschweig, 38106 Braunschweig, Germany;Laboratory for Emerging Nanometrology (LENA), TU Braunschweig, 38106 Braunschweig, Germany;MIND-IN2UB, Department of Electronic and Biomedical Engineering, University of Barcelona, 08007 Barcelona, Spain;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018;Research Center for Physics, Indonesian Institute of Sciences (LIPI), Tangerang Selatan 15314, Indonesia

关键词: gas sensor;    ZnO nanowire;    nanostructure;    photo-activation;    AlN-on-Si;    NO2 detection;   

DOI  :  10.3390/proceedings2130888

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

UV-light emitting diodes (395–278 nm) were used to investigate the gas sensing attributes of planar and nanostructured ZnO/AlN thin films on Si substrate towards NO2 at room temperature. A significant increased sensitivity ((Rg − Ra)/Ra = 65.3 ppm NO2 in air) and a strong reduction in recovery time (Trec = 14 min) were already observed for the planar ZnO/AlN thin films under UV-B (305 nm) irradiation compared to the other UV wavelengths, while the device showed no obvious response in dark. By enlarging the surface-to-volume ratio of the sensors (i.e., creating nanostructured ZnO/AlN thin films), an increased response time is expected to be observed.

【 授权许可】

CC BY