Interfacial Phonon Transport Through Si/Ge Multilayer Film Using Monte Carlo Scheme With Spectral Transmissivity

Frontiers in Energy Research

Guo, Yangyu¹  Ran, Xin² 

[1] Department of Micro/Nano Electronics, Institute of NanoMicroEnergy, Shanghai Jiao Tong University, China;Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics and Center for Nano and Micro Mechanics (CNMM), Tsinghua University, China

关键词: interfacial phonon transport;    Monte Carlo method;    micro-;    nano- scale heat transport;    Multilayer film;    Spectral transmissivity;   

DOI  :  10.3389/fenrg.2018.00028

学科分类：能源（综合）

来源: Frontiers

【 摘 要 】

The knowledge of interfacial phonon transport accounting for detailed phonon spectral properties is desired because of its importance for design of nanoscale energy systems. In this work, we investigate the interfacial phonon transport through Si/Ge multi-layer films using an efficient Monte Carlo scheme with spectral transmissivity, which is validated for cross-plane phonon transport through both Si or Ge single-layer and Si/Ge bi-layer thin films by comparing with the discrete-ordinates solution. Different thermal boundary conductances between even the same material pair are declared at different interfaces within the multilayer system. Furthermore, the thermal boundary conductances at different interfaces show different trends with varying total system size, with the variation slope very different as well. The results are much different from those in the bi-layer thin film or periodic superlattice. These unusual behaviors can be attributed to combined interfacial local non-equilibrium effect and constraint effect from other interfaces.

【 授权许可】

CC BY