Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

Nanoscale Research Letters

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[1] 0000 0001 2256 9319, grid.11135.37, Institute of Microelectronics, Peking University, 100871, Beijing, China;

关键词: Negative differential resistance;    Ruthenium;    RRAM;    Atomic layer deposition;   

DOI  :  10.1186/s11671-019-2885-2

来源: publisher

【 摘 要 】

In this work, Ru-based RRAM devices with atomic layer deposited AlOy/HfOx functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the resistive switching, the measured NDR behavior is believed to be associated with the partially unipolar reset effect, which is due to the recombination between oxygen vacancies and the thermally released oxygen ions from the RuO2 interface layer. The measured electrical characteristics and X-ray photoelectron spectroscopy (XPS) results verified the physical interpretation.

【 授权许可】

CC BY