Nanoscale Research Letters | |
A Nanoscale Low-Power Resistorless Voltage Reference with High PSRR | |
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[1] 0000 0004 0369 4060, grid.54549.39, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, China;0000 0004 1790 5236, grid.411307.0, College of Communication Engineering, Chengdu University of Information Technology, 610225, Chengdu, China; | |
关键词: Subthreshold; Low-power; High PSRR; Resistorless; Nanoscale; | |
DOI : 10.1186/s11671-019-2864-7 | |
来源: publisher | |
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【 摘 要 】
In this paper, a nano-watt resistorless subthreshold voltage reference with high-power supply rejection ratio (PSRR) is presented. A self-biased MOS voltage divider is proposed to provide bias current for whole voltage reference, which is a positive temperature coefficient (TC) current containing threshold voltage characteristics. By injecting the generated current into a transistor with a different threshold voltage, a delta threshold voltage with a greatly reduced negative TC is realized and temperature-compensated by a generated positive TC item at the same time. Therefore, a temperature-stable voltage reference is achieved in the proposed compacted method with low power consumption and high PSRR. Verification results with 65-nm CMOS technology demonstrate that the minimum supply voltage can be as low as 0.35 V with a 0.00182-mm2 active area. The generated reference voltage is 148 mV, with a TC of 28 ppm/°C for the − 30 to 80 °C temperature range. The line sensitivity is 1.8 mV/V, and the PSRR without any filtering capacitor at 100 Hz is 53 dB with a 2.28-nW power consumption.
【 授权许可】
CC BY
【 预 览 】
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RO201909242080366ZK.pdf | 3732KB | ![]() |